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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 493-500

Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets

(6) Lin, Y C a Lin, Z Q a Shen, C H a Wang, L Q a Ha, C T b Peng, Chris b

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b Williams Advanced Materials Technologies Taiwan Co Ltd (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BI-LAYER; CIGS CHALCOPYRITE; CIGS FILMS; CU(IN , GA)SE; DEVICE-QUALITY; P-TYPE CONDUCTIVITY; QUATERNARY ALLOYS; SELENIZATION; SODA LIME GLASS; STOICHIOMETRY RATIO; THICKNESS RATIO; THIN FILM SOLAR CELLS; WORKING PRESSURES;

COPPER; COPPER COMPOUNDS; FILM PREPARATION; GALLIUM; INDIUM; INDIUM ALLOYS; MOLYBDENUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; STOICHIOMETRY;

GALLIUM ALLOYS;

EID: 84856735213 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0424-8 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.