Band gap engineering by anion doping in the photocatalyst BiTaO 4: First principle calculations

International Journal of Hydrogen Energy

Volumn 37, Issue 4, 2012, Pages 3014-3018

  Nisar, Jawad ^a   Wang, Baochang ^b   Araujo, Carlos Moyses ^a,b   Ferreira Da Silva, Antonio ^c   Kang, Tae Won ^d   Ahuja, Rajeev ^a,b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

^d Dongguk University   (South Korea)

Author keywords

Anionic doping in BiTaO4; Band gap engineering; Photocatalysis

Indexed keywords

ANION DOPING; ANIONIC DOPING IN BITAO4; BAND GAP ENGINEERING; CO-DOPING; FIRST PRINCIPLE CALCULATIONS; FIRST PRINCIPLES METHOD; NON-METALLIC; NON-METALLIC ELEMENTS; PHOTOCATALYTIC EFFICIENCY; VISIBLE LIGHT ABSORPTION;

CALCULATIONS; ELECTRONIC STRUCTURE; HYDROGEN PRODUCTION; PHOTOCATALYSIS;

ENERGY GAP;

EID: 84856587728     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2011.11.068     Document Type: Article

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