Double-hole-mediated coupling of dopants and its impact on band gap engineering in TiO2

Physical Review Letters

Volumn 106, Issue 6, 2011, Pages

  Yin, Wan Jian ^a   Wei, Su Huai ^a   Al Jassim, Mowafak M ^a   Yan, Yanfa ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; CO-DOPING; DENSITY-FUNCTIONAL THEORY CALCULATIONS; DONOR-ACCEPTORS; DOPANT COMPLEXES; EFFECTIVE BAND GAP; IMPURITY BANDS; LATTICE RELAXATION; OXYGEN SITE; SEMICONDUCTOR BAND GAP; TIO;

DENSITY FUNCTIONAL THEORY; ENERGY GAP; OXYGEN;

DOPING (ADDITIVES);

EID: 79951536374     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.106.066801     Document Type: Article

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