Chiral index dependence of the G + and G - Raman modes in semiconducting carbon nanotubes

ACS Nano

Volumn 6, Issue 1, 2012, Pages 904-911

  Telg, Hagen ^a   Duque, Juan G ^a   Staiger, Matthias ^b   Tu, Xiaomin ^c   Hennrich, Frank ^d   Kappes, Manfred M ^d   Zheng, Ming ^c   Maultzsch, Janina ^b   Thomsen, Christian ^b   Doorn, Stephen K ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

(n,m) assignment; diameter determination; G mode; LO TO phonons; Raman spectroscopy; single wall carbon nanotubes

Indexed keywords

(N,M) ASSIGNMENT; CARBON ORBITALS; CHIRAL ANGLES; CHIRAL INDEX; DIAMETER DETERMINATION; G-MODES; HIGH ENERGY; PEAK POSITION; RADIAL BREATHING MODE; RAMAN INTENSITIES; RAMAN MODES; RE-HYBRIDIZATION; RESONANT RAMAN SCATTERING; SEMICONDUCTING CARBON NANOTUBES; THEORETICAL PREDICTION;

CARBON; ELECTRON-ELECTRON INTERACTIONS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

NANOMATERIAL;

ARTICLE; CHEMISTRY; CONFORMATION; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RAMAN SPECTROMETRY; SEMICONDUCTOR; ULTRASTRUCTURE;

MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; SPECTRUM ANALYSIS, RAMAN;

EID: 84856193465     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2044356     Document Type: Article

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