SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 1895-1901

Electrodeposition of amorphous silicon in non-oxygenated organic solvent

(5) Bechelany, Mikhael a,b Elias, Jamil a Brodard, Pierre a Michler, Johann a Philippe, Laetitia a

a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

b UNIV MONTPELLIER (France)

Author keywords

Annealing; Electrodeposition; Organic solvent; Raman spectroscopy; Silicon

Indexed keywords

ACETONITRIL; CONTROLLED ATMOSPHERE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; EXPERIMENTAL PARAMETERS; POROUS SI; SILICON LAYER; SILICON PRECURSORS; SILICON TETRACHLORIDE; STRUCTURAL CHARACTERIZATION; SUPPORTING ELECTROLYTE; TETRAETHYLAMMONIUM;

AMMONIUM COMPOUNDS; ANNEALING; DEPOSITS; DICHLOROMETHANE; ELECTRODEPOSITION; HYDROGEN; ORGANIC SOLVENTS; POROUS SILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SOLVENTS; X RAY SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 84855981477 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.09.026 Document Type: Article

Times cited : (40)

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