Photocarrier collection from depletion layer of LaMnO 3

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Fujioka, J ^a,b   Nakamura, M ^c   Kawasaki, M ^a,c   Tokura, Y ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS ELECTRIC FIELDS; DEPLETION LAYER; NB-DOPED SRTIO; P TYPE SEMICONDUCTOR; PHOTO-CARRIERS; PHOTOCARRIER; REVERSE BIAS VOLTAGE; SRTIO;

ELECTRIC FIELDS; PHOTOELECTRICITY; STRONTIUM ALLOYS; STRONTIUM TITANATES;

BIAS VOLTAGE;

EID: 84855931781     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3677790     Document Type: Article

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