Singly and doubly lithium doped silicon clusters: Geometrical and electronic structures and ionization energies

Journal of Chemical Physics

Volumn 136, Issue 2, 2012, Pages

  Tam, Nguyen Minh ^a,b   Ngan, Vu Thi ^a   De Haeck, Jorg ^c   Bhattacharyya, Soumen ^c   Thuy Le, Hai ^c   Janssens, Ewald ^c   Lievens, Peter ^c   Tho Nguyen, Minh ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b INSTITUTE FOR COMPUTATIONAL SCIENCE AND TECHNOLOGY   (Viet Nam)

^c KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ADIABATIC IONIZATION ENERGIES; CCSD; CLUSTER SIZES; DOPED SILICON; EFFICIENCY CURVES; EXPERIMENTAL VALUES; GEOMETRIC STRUCTURE; GEOMETRICAL AND ELECTRONIC STRUCTURES; GROWTH MECHANISMS; IONIZATION ENERGIES; IONIZATION THRESHOLDS; LI ATOMS; QUANTUM-CHEMICAL METHODS; SI ATOMS; SIMPLE RULES; VERTICAL IONIZATION ENERGY;

ATOMS; ELECTRONIC STRUCTURE; IONIZATION POTENTIAL; LITHIUM; PHOTOIONIZATION; QUANTUM CHEMISTRY; SILICON;

CRYSTAL ATOMIC STRUCTURE;

LITHIUM; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; ELECTRON; QUANTUM THEORY; SURFACE PROPERTY;

ELECTRONS; LITHIUM; MOLECULAR STRUCTURE; QUANTUM THEORY; SILICON; SURFACE PROPERTIES;

EID: 84855925868     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672164     Document Type: Article

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