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Solid State Communications

Volumn 152, Issue 4, 2012, Pages 284-287

Raman signatures of pressure induced electronic topological and structural transitions in Bi 2Te 3

(5) Pradhan, Gopal K a Bera, Achintya a Kumar, Pradeep a Muthu, D V S a Sood, A K a

a INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

A. Bi 2Te 3; C. High pressure Raman; D. Electronic topological transition

Indexed keywords

A. BI 2TE 3; DISPERSIONLESS; ELECTRONIC TOPOLOGICAL TRANSITION; HIGH PRESSURE RAMAN; MODE FREQUENCIES; PRESSURE DERIVATIVES; RAMAN MODES; RAMAN SIGNATURES; STRUCTURAL TRANSITIONS;

CONDENSED MATTER PHYSICS; SOLID STATE DEVICES;

TOPOLOGY;

EID: 84855880436 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.11.029 Document Type: Article

Times cited : (29)

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