Two-dimensional semimetal in HgTe-based quantum wells with surface orientation (100)

Solid State Communications

Volumn 152, Issue 4, 2012, Pages 265-267

  Olshanetsky, E B ^a   Kvon, Z D ^a   Mikhailov, N N ^a   Novik, E G ^a,b   Parm, I O ^a   Dvoretsky, S A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

A. Quantum wells; A. Semiconductors

Indexed keywords

CDTE; CHARGE NEUTRALITY; ENERGY BAND STRUCTURE; HOLE DENSITIES; SURFACE ORIENTATION; UNIVERSAL PROPERTIES;

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; LATTICE MISMATCH; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE;

TWO DIMENSIONAL;

EID: 84855864412     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.11.034     Document Type: Article

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