PbSe quantum well VECSEL on Si

AIP Conference Proceedings

Volumn 1416, Issue , 2011, Pages 109-112

  Fill, M ^a,b   Khiar, A ^a   Rahim, M ^a   Felder, F ^a,b   Zogg, H ^a  

^a ETH ZURICH   (Switzerland)

^b Camlin Technologies AG   (Italy)

Author keywords

IV VI semiconductors; Lead chalcogenides; Mid infrared; Si; VECSEL

Indexed keywords

EID: 84855774764     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3671710     Document Type: Conference Paper

References (6)

1. M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, Appl. Phys. Letters 91, 151102 (2007).
2. M. Rahim, M. Fill, F. Felder, D. Chappuis, M. Corda, and H. Zogg ,Appl. Phys. Letters 95, 241107 (2009).
3. M. Fill, A. Khiar, M. Rahim, F. Felder, and H. Zogg, J. Appl. Phys. 109, 093101 (2011).
4. A. Khiar, M. Rahim, M. Fill, F. Felder, F. Hobrecker, and H. Zogg ,Appl. Phys. Letters 97, 151104 (2010).
5. M. Eibelhuber, T. Schwarzl, S. Pichler, W. Heiss, and G. Springholz, Appl. Phys. Letters 97, 61103 (2010).
6. Z. Shi, A. Lambrecht, and M. Tacke,Sol. State Elect. 37, 1113 (1994).