Thermodynamic approach to the vaporization and growth phenomena of SiC ceramics. II. The SiC surface under oxidative conditions

Journal of the European Ceramic Society

Volumn 32, Issue 5, 2012, Pages 1137-1147

  Honstein, G ^a   Chatillon, C ^a   Baillet, F ^a  

^a CNRS   (France)

Author keywords

Active oxidation; Growth; SiC; Thermodynamics

Indexed keywords

CARBON PRECIPITATION; CONDENSATION PHENOMENON; FLOW BALANCE; GROWTH PHENOMENA; HIGH TEMPERATURE; OXIDATIVE CONDITIONS; OXYGEN PRESSURE; PASSIVE OXIDATION; SIC; SIC CERAMICS; THERMO DYNAMIC ANALYSIS; THERMODYNAMIC CALCULATIONS; THERMODYNAMIC CONDITIONS; TWO-POINT; VAPOR PHASE DEPOSITION;

GROWTH (MATERIALS); OXYGEN; SILICA; THERMOANALYSIS; THERMODYNAMICS; VAPORIZATION;

SILICON CARBIDE;

EID: 84855759512     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2011.11.031     Document Type: Article

References (13)

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