High-temperature analysis of the thermal degradation of silicon-based materials. I: Binary Si - O, Si - C, and Si - N compounds

High Temperatures - High Pressures

Volumn 31, Issue 4, 1999, Pages 413-432

  Chatillon, Christian ^a   Rocabois, Philippe ^b   Bernard, Claude ^a  

^a Domaine Universitaire   (France)

^b IRSID   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033475083     PISSN: 00181544     EISSN: None     Source Type: Journal    
DOI: 10.1068/htrt149     Document Type: Article

References (26)

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