Electrodeposition of In 2S 3 buffer layer for Cu(In,Ga)Se 2 solar cells

Energy Procedia

Volumn 10, Issue , 2011, Pages 155-160

  Naghavi, N ^a   Chassaing, E ^a   Bouttemy, M ^b   Rocha, G ^a   Renou, G ^a   Leite, E ^a   Etcheberry, A ^b   Lincot, D ^a  

^a CNRS   (France)

^b UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

Buffer layer; CIGSe solar cells; Electrodeposition; Indium sulfide

Indexed keywords

CELL PARAMETER; CU(IN , GA)SE; DEPOSITION PARAMETERS; DEPOSITION POTENTIAL; ELECTROCHEMICAL DEPOSITION; FILL FACTOR; PHOTOELECTRIC CONVERSION EFFICIENCY; XPS MEASUREMENTS;

BUFFER LAYERS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CONVERSION EFFICIENCY; COPPER; DEPOSITION; ELECTRODEPOSITION; FILMS; GALLIUM; GALLIUM ALLOYS; INDIUM; INDIUM SULFIDE; OPTICAL WAVEGUIDES; OPTIMIZATION; PHOTOVOLTAIC EFFECTS; REDUCTION; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM;

NANOSTRUCTURED MATERIALS;

EID: 84855687143     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.169     Document Type: Conference Paper

References (12)

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