Precursor concentration effect on the properties of ZnIn 2Se 4 layers grown by chemical bath deposition

Energy Procedia

Volumn 10, Issue , 2011, Pages 177-181

  Babu, P ^a   Ramakrishna Reddy, K T ^a   Miles, R W ^b  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b NORTHUMBRIA UNIVERSITY   (United Kingdom)

Author keywords

Chemical bath deposition; Physical properties; ZnIn 2Se 4 films

Indexed keywords

BATH TEMPERATURES; CHEMICAL BATH; CHEMICAL-BATH DEPOSITION; COMPOSITION ANALYSIS; DEFECT STATE; DEPOSITION TIME; ENERGY BANDGAPS; FT-IR STUDY; GLASS SUBSTRATES; NANOCRYSTALLINES; PHOTOLUMINESCENCE SPECTRUM; PRECURSOR CONCENTRATION; PREFERRED ORIENTATIONS; SODIUM SELENITE; STRUCTURAL STUDIES; TRI-CHLORIDE; VISIBLE RANGE; ZINC CHLORIDE;

CHLORINE; CHLORINE COMPOUNDS; CRYSTALLITE SIZE; FUNCTIONAL GROUPS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; PHYSICAL PROPERTIES; SELENIUM COMPOUNDS; SODIUM; SUBSTRATES; SURFACE DEFECTS; ZINC;

FILMS;

EID: 84855659609     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.173     Document Type: Conference Paper

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