Structure formation and mechanisms of DC conduction in thermally evaporated nanocrystallite structure ZnIn2Se4 thin films

Physica B: Condensed Matter

Volumn 404, Issue 21, 2009, Pages 3957-3963

  Zeyada, H M ^a   Aziz, M S ^a   Behairy, A S ^a  

^a Faculty of Science at New Damietta   (Egypt)

Author keywords

Electrical properties; Hetero junction diode; ZnIn2Se4

Indexed keywords

ANNEALING TEMPERATURES; CONDUCTION MECHANISM; DARK CURRENT-VOLTAGE; DC CONDUCTION; DENSITY OF STATE; DISLOCATION DENSITIES; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; FORWARD BIAS; HOPPING DISTANCES; HOPPING ENERGIES; HOT PROBE; INTERNAL STRAINS; JUNCTION DIODE; N-TYPE SEMICONDUCTORS; PLANAR STRUCTURE; POLYCRYSTALLINE STRUCTURE; POTENTIAL BARRIERS; RECIPROCAL TEMPERATURE; RECTIFICATION BEHAVIOR; SPACE CHARGE LIMITED CURRENTS; STRUCTURE FORMATIONS; TRAP CONCENTRATION; TRAP ENERGY LEVELS; VARIABLE RANGE HOPPING;

ACTIVATION ENERGY; CRYSTALLITE SIZE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CONDUCTIVITY; NANOCRYSTALLITES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPACE PROBES; THERMAL EVAPORATION; THERMIONIC EMISSION; THIN FILMS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 71449123779     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.132     Document Type: Article

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