Excitation wavelength dependences of terahertz emission from surfaces of InSb and InAs

Electronics Letters

Volumn 47, Issue 21, 2011, Pages 1186-1187

  Biciunas A ^a   Malevich, Y V ^a   Krotkus, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION WAVELENGTH; FEMTO-SECOND LASER; GOLAY CELLS; INAS; LASER WAVELENGTH; P-TYPE; POWER CONVERSION EFFICIENCIES; SEMI-CONDUCTOR SURFACES; TERAHERTZ; TERAHERTZ EMISSIONS; THZ EMITTERS;

CONVERSION EFFICIENCY; INDIUM ANTIMONIDES; LASER EXCITATION; SEMICONDUCTOR LASERS; ULTRAFAST LASERS; ULTRASHORT PULSES;

INDIUM ARSENIDE;

EID: 84855412478     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.1925     Document Type: Article

References (8)

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