Carbon related defects and iron distribution in cast-grown polycrystalline silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1269-1272

  Ohshita, Y ^a   Arafune, K ^a   Sasaki, T ^a   Tachibana, M ^a   Terada, Y ^b   Tanaka, S ^c   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JASRI SPring 8 ^*  (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ETCHING; GRAIN BOUNDARIES; SOLAR CELLS; SOLUBILITY;

CARRIER DIFFUSION LENGTH; ETCHPITS; SOLAR CELL PERFORMANCE;

POLYCRYSTALLINE MATERIALS;

EID: 27944434324     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. M. Kittler, C. Ulhaqbouillet, and V. Higgs, Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level", J. Appl. Phys. 78, 1995, pp. 4573-4583
3. A. Ihlal and R. Rizk, "Effects of iron contamination on the electrical activity of a silicon bicrystal", J. Phys. D 29, 1996, pp. 3096-3100
4. J. Lu, M. Wagener, and G. Rozgonyi, "Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon", J. Appl. Phys. 94, 2003, pp. 140-144
5. O. Schultz et al., "Thermal oxidation processes for high-efficiency multicrystalline silicon solar cells", 19th European PVSEC, 2004, pp.604-607.