Stoichiometry controlled, single-crystalline Bi 2Te 3 nanowires for transport in the basal plane

Advanced Functional Materials

Volumn 22, Issue 1, 2012, Pages 151-156

  Peranio, Nicola ^a   Leister, Eva ^b   Töllner, William ^b   Eibl, Oliver ^a   Nielsch, Kornelius ^b  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

electrodeposition; nanowires; thermoelectricity; transmission electron microscopy; X ray diffraction

Indexed keywords

ACTIVE FIELD; BASAL PLANES; BULK MATERIALS; DARK FIELD IMAGES; EDX SPECTROSCOPY; ELECTROCHEMICAL DEPOSITION; GROWTH TECHNOLOGIES; HIGH-ACCURACY; MATRIX; NANO-STRUCTURED; NANOSTRUCTURED BULK; ROOM TEMPERATURE; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE WIRES; STOICHIOMETRY CONTROL; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC MATERIAL; TRANSMISSION ELECTRON;

CRYSTALLINE MATERIALS; ELECTRODEPOSITION; ELECTRON DIFFRACTION; ELECTRONS; FILMS; GRAIN BOUNDARIES; MATERIALS HANDLING EQUIPMENT; NANOWIRES; REDUCTION; STOICHIOMETRY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

CRYSTAL STRUCTURE;

EID: 84855309790     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201101273     Document Type: Article

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