Use of the thermal chemical vapor deposition to fabricate light-emitting diodes based on ZnO nanowire/p-GaN heterojunction

Journal of Nanomaterials

Volumn 2011, Issue , 2011, Pages

  Chang, Sheng Po ^a   Chang, Ting Hao ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; DEEP DEFECTS; DEFECT-RELATED EMISSION; EMISSION PEAKS; P-N JUNCTION; QUARTZ TUBES; ROOM TEMPERATURE; THERMAL CHEMICAL VAPOR DEPOSITION; VERTICALLY ALIGNED; YELLOW BANDS; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES;

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOWIRES; QUARTZ; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84855170304     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2011/903176     Document Type: Article

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