Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO 2 core-shell nanoparticles

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Jang, Lee Woon ^a   Sahoo, Trilochan ^a   Jeon, Dae Woo ^a   Kim, Myoung ^a   Jeon, Ju Won ^a   Jo, Dong Seob ^a   Kim, Min Kyu ^a   Yu, Yeon Tae ^a   Polyakov, Alexander Y ^a   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOPARTICLE; CORE-SHELL NANOPARTICLES; DECAY TIME; GAN/INGAN; INGAN/GAN; LOCALIZED SURFACE PLASMON; MULTI-QUANTUM WELL STRUCTURES; MULTIQUANTUM WELLS; PHOTOLUMINESCENCE EFFICIENCY; PL INTENSITY; SHELL THICKNESS; STRONG COUPLING; THIN LAYERS;

DEPOSITION; NANOPARTICLES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; SOL-GEL PROCESS;

QUANTUM EFFICIENCY;

EID: 84555218502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671394     Document Type: Article

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