Enhanced rectifying response from metal-insulator-insulator-metal junctions

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Maraghechi, P ^a   Foroughi Abari, A ^a   Cadien, K ^a   Elezzabi, A Y ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TUNNELING; HIGHLY NONLINEAR; METALLIC ELECTRODES; NON-LINEARITY; OXIDE LAYER; POTENTIAL BARRIERS; REVERSE BIAS; TUNNELING MECHANISM;

ELECTRODES; ELECTRON TUNNELING; METAL INSULATOR BOUNDARIES; METALLIC COMPOUNDS; NUCLEAR PHYSICS; QUANTUM ELECTRONICS; SEMICONDUCTOR INSULATOR BOUNDARIES;

METALS;

EID: 84555218394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671071     Document Type: Article

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