Thermal and free carrier concentration mapping during BSD event in Smart Power BSD protection devices using an improved laser interferometric technique

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1365-1370

  Furbock C ^a   Esmark, K ^b   Litzenberger, M ^a   Pogany, D ^a   Groos, G ^b   Zelsacher, R ^c   Gornik, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444229423     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00144-X     Document Type: Article

References (7)

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3. Stricker AD, Mettler S, Wolf H, Mergens M, Wilkening W, Gieser H and Fichtner W. Characterization and optimization of a bipolar BSD-device by measurements and simulations. Proc. EOS/ESD Symp. (1998) 290-300.
4. Mergens M, Wilkening W, Mettler S, Wolf H, Stricker A and Fichtner W. Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions. Proc. EOS/ESD Symp. (1999) 1-10.
5. Heinrich HK, Bloom DM and Hemenway BR. Noninvasive sheet charge density probe for integrated silicon devices. Appl. Phys. Lett. 48 (1986) 1066-1068.
6. Goldstein M, Sölkner G and Gornik E. Heterodyne interferometer for the detection of electric and thermal signals in integrated circuits through the substrate. Rev. Sci. Instr. 64 (1993) 3009-3013.
7. Seliger N, Habaš P, Pogany D and Gornik E. Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing. Solid-State Electronics 41 (1997) 1285-1292.