Reliability aspects of high temperature power MOSFETs

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1679-1682

  Manca, J V ^a   Wondrak, W ^b   Schaper, W ^b   Croes, K ^a   D'Haen, J ^a   De Ceuninck, W ^a   Dieval, B ^c   Hartnagel, H L ^d   D'Olieslaeger, M ^a   De Schepper, L ^a  

^a HASSELT UNIVERSITY   (Belgium)

^b DAIMLER AG   (Germany)

^c NOKIA RESEARCH CENTER   (United States)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444225862     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00187-6     Document Type: Article

References (8)

1. W. Wondrak, Passive Components : Requirements by Automotive Applications, CARTS-Europe 1998, pp. 77-80.
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3. 2, Proc. IRPS 1994, pp. 120-125.
4. K. Croes, J.V. Manca, W. De Ceuninck, L. De Schepper, and G. Molenberghs, The time of 'guessing' your failure time distribution is over, Microelectr. and Reliability 38 (1998), 1187-1191.
5. Chen, C.Y. Wu, M.K. Lee and C.N. Chen, The dielectric reliability of intrinsic SiO2 films thermally grown on a heavily doped Si substrate characterisation and modelling, IEEE Transactions on Electron Devices, Vol. 34 (1987), pp. 1540-1552.
6. Bain, Statistical analysis of reliability and lifetesting models : theory and methods, Marcel Dekker Inc., New York, 1978.
7. FAILURE, Software package for reliability data analysis distributed by DESTIN NV, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
8. R. Degraeve, B. Kaczer and G. Groeseneken, Degradation and breakdown of thin oxide layers mechanisms, models and reliability prediction, Microelectronics and Reliability 39 (1999) 1445-1460.