Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Han, Lifen ^a   Zhu, Yonggang ^a   Zhang, Xinhui ^a   Tan, Pingheng ^a   Ni, Haiqiao ^a   Niu, Zhichuan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; RELAXATION TIME; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

DOMINANT CONTRIBUTIONS; ELECTRON DENSITY DEPENDENCE; GAAS/ALGAAS QUANTUM WELL; MICROSCOPIC KINETICS; PHOTOEXCITED CARRIERS; RASHBA SPIN-ORBIT COUPLING; SPIN RELAXATION TIME; STRUCTURAL SYMMETRY; BLOCH EQUATION; COULOMB SCATTERING; D'YAKONOV-PEREL; DENSITY DEPENDENCE; DENSITY-DEPENDENT; EXPERIMENTAL OBSERVATION; GAAS; GAAS/ALGAAS; KERR ROTATION; SPIN RELAXATION; TIME-RESOLVED;

SPIN DYNAMICS;

EID: 84255214234     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-84     Document Type: Article

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