Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Stavarache, Ionel ^a   Lepadatu, Ana Maria ^a   Teodorescu, Valentin Serban ^a   Ciurea, Magdalena Lidia ^a   Iancu, Vladimir ^b   Dragoman, Mircea ^c   Konstantinidis, George ^d   Buiculescu, Raluca ^e  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^c NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^e UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POLARITY; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CURRENT VOLTAGE; ELECTRICAL BEHAVIORS; I - V CURVE; METALLIC BEHAVIORS; PERCOLATION PROCESS; PERCOLATION THRESHOLDS; SILICON NITRIDE MATRIX; SPATIAL EXTENSION; TEMPERATURE DEPENDENCE;

AMORPHOUS CARBON; CURRENT VOLTAGE CHARACTERISTICS; MULTIWALLED CARBON NANOTUBES (MWCN); PERCOLATION (FLUIDS); SILICON NITRIDE; SOLVENTS; TRANSMISSION ELECTRON MICROSCOPY; AMORPHOUS SILICON;

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS;

EID: 84255214231     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-87     Document Type: Article

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