Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Xu, Pengfa ^a   Lu, Jun ^a   Chen, Lin ^a   Yan, Shuai ^a   Meng, Haijuan ^a   Pan, Guoqiang ^b   Zhao, Jianhua ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; TEMPERATURE; EPITAXIAL GROWTH; MANGANESE COMPOUNDS; PHASE TRANSITIONS; RHODIUM; X RAY DIFFRACTION;

EFFECT OF STRAIN; FERROMAGNETIC TRANSITION TEMPERATURES; GAAS SUBSTRATES; GRAZING INCIDENCE X-RAY DIFFRACTION; MAGNETOSTRUCTURAL PHASE TRANSITION; REMNANT MAGNETIZATION; STRAIN CONSTRAINT; STRAIN INDUCED; FIRST-ORDER; GAAS; GAAS SURFACES; MNAS FILMS; STRAIN STATE;

MANGANESE COMPOUNDS; GALLIUM ARSENIDE;

EID: 84255191034     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-125     Document Type: Article

References (27)

1. Zhao YJ, Geng WT, Freeman AJ: Structural, electronic, and magnetic properties of α- and β-MnAs: LDA and GGA investigations. Phys Rev B 2002,65:113202.
2. Bonanni A: Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths. Semicond Sci Technol 2007, 22:R41.
3. Bonanni A, Simbrunner C, Wegscheider M, Przybylinska H, Wolos A, Sitter H, Jantsch W: Doping of GaN with Fe and Mg for spintronics applications. Phys Stat Sol (b) 2006, 243:1701.
4. Schippan F, Trampert A, Däweritz L, Ploog KH, Dennis B, Neumann KU, Ziebeck KRA: Microstructure formation during MnAs growth on GaAs(0 0 1). J Cryst Growth 2000, 201/202:674.
5. Tanaka M, Saito K, Nishinaga T: Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures. Appl Phys Lett 1999, 74:64.
6. Däweritz L, Kästner M, Hesjedal T, Plake T, Jenichen B, Ploog KH: Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection. J Cryst Growth 2003, 251:297.
7. Kolovos-Vellianitis D, Herrmann C, Däweritz L, Ploog KH: Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110). Appl Phys Lett 2005, 87:092505.
8. Akinaga H, Miyanishi S, Tanaka K, Van Roy W, Onodera K: Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters. Appl Phys Lett 2000, 76:97.
9. Akinaga H, De Boeck J, Borghs G, Miyanishi S, Asamitsu A, Van Roy W, Tomioka Y, Kuo LH: Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters. Appl Phys Lett 1998, 72:3368.
10. Schippan F, Trampert A, Däweritz L, Ploog KH: Kinetics of MnAs growth on GaAs(001) and interface structure. J Vac Sci Technol B 1999, 17:1716
11. Lu J, Meng HJ, Deng JJ, Xu PF, Chen L, Zhao JH, Jia QJ: Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4 × 4) reconstructed GaAs (001) surface. J Appl Phys 2009, 106:013911.
12. Stephens J, Berezovsky J, McGuire JP, Sham LJ, Gossard AC, Awschalom DD: Spin accumulation in forward-biased MnAs/GaAs schottky diodes. Phys Rev Lett 2004, 93:097602.
13. Garcia V, Jaffrès H, Eddrief M, Marangolo M, Etgens VH, George JM: Resonant tunneling magnetoresistance in MnAs/III-V/MnAs junctions. Phys Rev B 2005, 72:081303(R).
14. Garcia V, Jaffrès H, George JM, Marangolo M, Eddrief M, Etgens VH: Spectroscopic measurement of spin-dependent resonant tunneling through a 3D disorder: The case of MnAs/GaAs/MnAs junctions. Phys Rev Lett 2006, 97:246802.
15. Bean CP, Rodbell DS: Magnetic disorder as a first-order phase transformation. Phys Rev 1962, 126:104.
16. Menyuk N, Kafalas JA, Dwight K, Goodenough JB: Effects of pressure on the magnetic properties of MnAs. Phys Rev 1969, 177:942.
17. Zhao YJ, Zunger A: Zinc-blende half-metallic ferromagnets are rarely stabilized by coherent epitaxy. Phys Rev B 2005, 71:132403.
18. Garcia V, Sidis Y, Marangolo M, Vidal F, Eddrief M, Bourges P, Maccherozzi F, Ott F, Panaccione G, Etgens VH: Biaxial strain in the hexagonal plane of MnAs thin films: The key to stabilize ferromagnetism to higher temperature. Phys Rev Lett 2007, 99:117205.
19. Jenichen B, Kaganer VM, Kästner M, Herrmann C, Däweritz L, Ploog KH, Darowski N, Zizak I: Structural and magnetic phase transition in MnAs (0001)/GaAs(111) epitaxial films. Phys Rev B 2003, 68:132301.
20. Kaganer VM, Jenichen B, Schippan F, Braun W, Däweritz L, Ploog KH: Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study. Phys Rev B 2002, 66:045305.
21. Ney A, Hesjedal T, Däweritz L, Koch R, Ploog KH: Extending the magnetic order of MnAs films on GaAs to higher temperatures. J Magn Magn Mater 2004, 288:173.
22. Das AK, Pampuch C, Ney A, Hesjedal T, Däweritz L, Koch R, Ploog KH: Ferromagnetism of MnAs studied by heteroepitaxial films on GaAs(001). Phys Rev Lett 2003, 91:087203.
23. Iikawa F, Brasil MJSP, Adriano C, Couto ODD, Giles C, Santos PV, Däweritz L, Rungger I, Sanvito S: Lattice distortion effects on the magnetostructural phase transition of MnAs. Phys Rev Lett 2005, 95:077203.
24. Rache Salles B, Marangolo M, David C, Girard JC: Cross-sectional magnetic force microscopy of MnAs/GaAs(001). Appl Phys Lett 2010, 96:052510.
25. Däweritz L, Wan L, Jenichen B, Herrmann C, Mohanty J, Trampert A, Ploog KH: Thickness dependence of the magnetic properties of MnAs films on GaAs(001) and GaAs(113)A: Role of a natural array of ferromagnetic stripes. J Appl Phys 2004, 96:5056.
26. Berry JJ, Potashnik SJ, Chun SH, Ku KC, Schiffer P, Samarth N: Two-carrier transport in epitaxially grown MnAs. Phys Rev B 2001, 64:052408.
27. Willis BTM, Rooksby HP: Magnetic transitions and structural changes in hexagonal manganese compounds. Proc Phys Soc Sect B 1954, 67:290.