메뉴 건너뛰기




Volumn 6, Issue 1, 2011, Pages

A delta-doped quantum well system with additional modulation doping

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPED; ELECTRON SYSTEMS; FIELD MEASUREMENT; IN-SITU; LANDAU LEVEL FILLING FACTORS; MAGNETIC COMPONENTS; MODULATION DOPING; POTENTIAL APPLICATIONS; QUANTUM WELL; QUANTUM WELL SYSTEMS; TRANSPORT MEASUREMENTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

EID: 84255173303     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-139     Document Type: Article
Times cited : (9)

References (25)
  • 1
    • 0018845364 scopus 로고
    • Complex free-carrier profile synthesis by "atomic-plane" doping of MBE GaAs
    • Wood GEC, Metze G, Berry J, Eastman LF: Complex free-carrier profile synthesis by "atomic-plane" doping of MBE GaAs. J Appl Phys 1980, 51:383.
    • (1980) J Appl Phys , vol.51 , pp. 383
    • Wood, G.E.C.1    Metze, G.2    Berry, J.3    Eastman, L.F.4
  • 2
    • 0343191762 scopus 로고
    • Delta-doped quantum well structures grown by molecular beam epitaxy
    • Liu DG, Lee CP, Chang KH, Wu JS, Liou DC: Delta-doped quantum well structures grown by molecular beam epitaxy. Appl Phys Lett 1990, 57:1887.
    • (1990) Appl Phys Lett , vol.57 , pp. 1887
    • Liu, D.G.1    Lee, C.P.2    Chang, K.H.3    Wu, J.S.4    Liou, D.C.5
  • 3
    • 0038914834 scopus 로고
    • Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ- doped GaAs:Si
    • Wagner J, Ramsteiner M, Richards D, Fasol G, Ploog K: Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ- doped GaAs:Si. Appl Phys Lett 1991, 58:143.
    • (1991) Appl Phys Lett , vol.58 , pp. 143
    • Wagner, J.1    Ramsteiner, M.2    Richards, D.3    Fasol, G.4    Ploog, K.5
  • 4
    • 0001184034 scopus 로고
    • Properties of center and edge δ-doped GaAs- AlGaAs quantum wells grown by metalorganic chemical vapor deposition
    • Kim Y, Kim MS, Min SK: Properties of center and edge δ-doped GaAs- AlGaAs quantum wells grown by metalorganic chemical vapor deposition. Appl Phys Lett 1993, 62:741.
    • (1993) Appl Phys Lett , vol.62 , pp. 741
    • Kim, Y.1    Kim, M.S.2    Min, S.K.3
  • 5
    • 0029208291 scopus 로고
    • 0.73As/GaAs single quantum wells grown by metalorganic chemical vapour deposition
    • Kim TW, Kim Y, Min SK: Magnetotransport and electric subband studies of Si-delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapour deposition. Thin Solid Films 1995, 254:61.
    • (1995) Thin Solid Films , vol.254 , pp. 61
    • Kim, T.W.1    Kim, Y.2    Min, S.K.3
  • 6
    • 0013110719 scopus 로고    scopus 로고
    • Magnetic-field-induced insulator- quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wells
    • Lee CH, Chang YH, Suen YW, Lin HH: Magnetic-field-induced insulator- quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wells. Phys Rev B 1997, 56:15238.
    • (1997) Phys Rev B , vol.56 , pp. 15238
    • Lee, C.H.1    Chang, Y.H.2    Suen, Y.W.3    Lin, H.H.4
  • 7
    • 0000141821 scopus 로고    scopus 로고
    • 1-xAs multiple quantum wells
    • Lee CH, Chang YH, Suen YW, Lin HH: Magnetic-field-induced delocalization in center-doped GaAs/AlxGa1-xAs multiple quantum wells. Phys Rev B 1998, 58:10629.
    • (1998) Phys Rev B , vol.58 , pp. 10629
    • Lee, C.H.1    Chang, Y.H.2    Suen, Y.W.3    Lin, H.H.4
  • 8
    • 1842801807 scopus 로고    scopus 로고
    • Transport and Optical Studies of the D-Conduction Band in Doped GaAs/AlGaAs Quantum Wells
    • Lee CH, Chang YH, Huang CF, Huang MY, Lin HH, Lee CP: Transport and Optical Studies of the D-Conduction Band in Doped GaAs/AlGaAs Quantum Wells. Chin J Phys 2001, 39:363.
    • (2001) Chin J Phys , vol.39 , pp. 363
    • Lee, C.H.1    Chang, Y.H.2    Huang, C.F.3    Huang, M.Y.4    Lin, H.H.5    Lee, C.P.6
  • 9
    • 2842572113 scopus 로고
    • Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ-doped GaAs
    • Wagner J, Fischer A, Ploog K: Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ-doped GaAs. Appl Phys Lett 1991, 59:428.
    • (1991) Appl Phys Lett , vol.59 , pp. 428
    • Wagner, J.1    Fischer, A.2    Ploog, K.3
  • 10
    • 70350064286 scopus 로고    scopus 로고
    • Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems
    • Oubram O, Mora-Ramos ME, Gaggero-Sager LM: Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems. Eur J Phys 2009, 71:233.
    • (2009) Eur J Phys , vol.71 , pp. 233
    • Oubram, O.1    Mora-Ramos, M.E.2    Gaggero-Sager, L.M.3
  • 12
    • 77951977943 scopus 로고    scopus 로고
    • Impacts of Coulomb Interactions on the Magnetic Responses of Excitonic Complexes in Single Semiconductor Nanostructures
    • Chang WH, Lin CH, Fu YJ, Lin TC, Lin H, Cheng SJ, Lin SD, Lee CP: Impacts of Coulomb Interactions on the Magnetic Responses of Excitonic Complexes in Single Semiconductor Nanostructures. Nanoscale Res Lett 5:680.
    • Nanoscale Res Lett , vol.5 , pp. 680
    • Chang, W.H.1    Lin, C.H.2    Fu, Y.J.3    Lin, T.C.4    Lin, H.5    Cheng, S.J.6    Lin, S.D.7    Lee, C.P.8
  • 17
    • 4444293142 scopus 로고    scopus 로고
    • Global phase diagram in the quantum Hall effect
    • Kivelson S, Lee DH, Zhang SC: Global phase diagram in the quantum Hall effect. Phys Rev B 1992, 46:2223.
    • (2223) Phys Rev B , vol.1992 , pp. 46
    • Kivelson, S.1    Lee, D.H.2    Zhang, S.C.3
  • 18
    • 0000242269 scopus 로고    scopus 로고
    • Quantum Hall Effect at Low Magnetic Fields
    • and references therein
    • Huckestein B: Quantum Hall Effect at Low Magnetic Fields. Phys Rev Lett 2000,84:3141, and references therein.
    • (2000) Phys Rev Lett , vol.84 , pp. 3141
    • Huckestein, B.1
  • 20
    • 4243859689 scopus 로고    scopus 로고
    • New Universality at the Magnetic Field Driven Insulator to Integer Quantum Hall Effect Transitions
    • Song SH, Shahar D, Tsui DC, Xie YH, Monroe D: New Universality at the Magnetic Field Driven Insulator to Integer Quantum Hall Effect Transitions. Phys Rev Lett 1997, 78:2200.
    • (2200) Phys Rev Lett , vol.1997 , pp. 78
    • Song, S.H.1    Shahar, D.2    Tsui, D.C.3    Xie, Y.H.4    Monroe, D.5
  • 25


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.