Transport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wells

Chinese Journal of Physics

Volumn 39, Issue 4, 2001, Pages 363-368

  Lee, C H ^a   Chang, Y H ^a   Huang, C F ^a   Huang, M Y ^a   Lin, H H ^a   Lee, C P ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842801807     PISSN: 05779073     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. S. V. Kravchenko et al., Phys. Rev. B 50, 8039 (1994);
2. S. V. Karavchenko et al., Phys. Rev. B 51, 7038 (1995);
3. S. V. Kranchenko et al., Phys. Rev. Lett. 77, 4938 (1996).
4. N. F. Mott, in Metal-Insulator Transitior, eds. Taylor and Francis (London & New York), 1990.
5. see, e.g., T. Ando, A. B. Flower, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
6. S. Huant, S. P. Najda, and B. Etienne, Phys. Rev. Lett. 65, 1486 (1990);
7. Y. H. Chang et al., Phys. Rev. Lett. 69, 2256 (1992);
8. S. Holmes et al., Phys. Rev. Lett. 69, 2571 (1992),
9. C. H. Lee et al., Chinese J. Phys. 36, 519 (1998).
10. H. W. Jiang et al., Phys. Rev. Lett. 71, 1439, (1993);
11. D. Shahar et al., Phys. Rev. Lett. 79, 479 (1997);
12. C. H. Lee et al., Phys. Rev. B 58, 10629 (1998).
13. M. W. Lee et al., Solid. State. Commun. 66, 23 (1988);
14. S. Liu et al., Phys. Rev. B 48, 11394 (1993);
15. W. Hilbert et al., Phys. Rev. B 53, 6919 (1996).
16. C. Yamanouchi, J. Phys. Soc. Japan, 20, 1029 (1965);
17. H. Nishimura, Phys. Rev. 138, 815 (1965).
18. B. I. Shklovskii, and A. L. Efros, Electronic properties of Doped Semiconductors (Springer-Verlag Berlin, Heidelberg, New York, & Tokyo, 1984).