Blinking statistics of silicon quantum dots

Nano Letters

Volumn 11, Issue 12, 2011, Pages 5574-5580

  Bruhn, Benjamin ^a   Valenta, Jan ^b   Sangghaleh, Fatemeh ^a   Linnros, Jan ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

bleaching; Blinking; intermittency; nanocrystal; photoluminescence; quantum dot; silicon; statistical aging

Indexed keywords

BLINKING; BLINKING STATISTICS; DIRECT TRANSFER; EXCITATION POWER DENSITY; INTERMITTENCY; POWER LAW DISTRIBUTION; SILICON QUANTUM DOTS; SINGLE QUANTUM DOT; SINGLE-PHOTON ABSORPTIONS; SQUARE-ROOT; TRAP STATE;

BLEACHING; MULTIPHOTON PROCESSES; NANOCRYSTALS; PHOTOLUMINESCENCE; PLASMA ETCHING; SEMICONDUCTOR QUANTUM DOTS; SILICON;

STATISTICS;

NANOPARTICLE; QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; LUMINESCENCE; OXIDATION REDUCTION REACTION; ULTRASTRUCTURE;

LUMINESCENCE; NANOPARTICLES; OXIDATION-REDUCTION; QUANTUM DOTS; SILICON;

EID: 83655164324     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203618h     Document Type: Article

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