Self-heating effects in ultrathin FD SOI transistors

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2011, Pages

  Rodriguez, N ^a   Navarro, C ^a   Andrieu, F ^b   Faynot, O ^b   Gamiz, F ^a   Cristoloveanu, S ^c  

^a UNIVERSITY OF GRANADA   (Spain)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE TEMPERATURE; HIGH RESOLUTION; HIGH VOLTAGE DEVICES; SELF-HEATING; SELF-HEATING EFFECT; SILICON FILM THICKNESS; SILICON-ON-INSULATOR TRANSISTORS; SOI TRANSISTORS; ULTRA-THIN;

SILICON ON INSULATOR TECHNOLOGY;

EID: 83455206280     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2011.6081685     Document Type: Conference Paper

References (4)

1. J. Jomaah et al., Solid-State Electronics, 38(3), p.615, 1995.
2. C. Fiegna et al., IEEE Trans. Eletr. Dev., 55(3), p.233, 2004.
3. F. Andrieu et al., Proceedings IEEE ICICFT Conference, p.59, 2010.
4. C. Anghel et al., IEEE Electr. Dev. Lett., 25(3), p.141, 2004.