Room-temperature InAs/InP quantum-dot photonic crystal microlasers using cavity-confined slow light

Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Volumn , Issue , 2007, Pages

  Bordas, F ^a   Seassal, C ^a   Dupuy, E ^a   Regreny, P ^a   Gendry, M ^a   Steel, M J ^b,c   Rahmani, A ^d  

^a ECOLE CENTRALE DE LYON   (France)

^b RSoft Design Group Inc   (United States)

^c UNIVERSITY OF SYDNEY   (Australia)

^d MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

INAS/INP; LASER OPERATIONS; LASING THRESHOLD; MICRO LASER; ROOM TEMPERATURE; SINGLE LAYER;

CRYSTAL STRUCTURE; LIGHT; PHOTONIC CRYSTALS; QUANTUM DOT LASERS; SEMICONDUCTOR QUANTUM DOTS;

SLOW LIGHT;

EID: 82955207729     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEO.2007.4452685     Document Type: Conference Paper

References (6)

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2. C. Monat et al., "InP-based two-dimensional photonic crystal on silicon : Inplane Bloch mode laser", Appl. Phys. Lett. 81-27, p 5102-5104 (2002)
3. B. Ben Bakir et al., "Surface-emitting microlaser combining two-dimensional photonic crystal membrane and vertical Bragg mirror", Appl. Phys. Lett. 88, 081113-3 (2006).
4. D. Englund et al., "Controlling the Spontaneous Emission Rate of Single Quantum Dots in a Two-Dimensional Photonic Crystal", Phys. Rev. Lett. 96, 013904 (2005).
5. S. Strauf et al., "Self-tuned quantum dot gain in photonic crystal lasers," Phys. Rev. Lett. 96, 127404 (2006).
6. M. Nomura et al.,"Room temperature continuous-wave lasing in photonic crystal nanocavity", Opt. Express 14, 6308-6315 (2006).