Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Amari, H ^a   Lari, L ^a   Zhang, H Y ^a   Geelhaar, L ^b   Cheze C ^b   Kappers, M J ^c   McAleese, C ^c   Humphreys, C J ^c   Walther, T ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; CALIBRATION; DISPERSION (WAVES); ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITRIDES; OPTOELECTRONIC DEVICES; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS; X RAY SPECTROSCOPY;

CALIBRATION PROCEDURE; ELECTRONIC TRANSITION; ELEMENTAL DISTRIBUTION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; HIGH TEMPERATURE ELECTRONIC DEVICES; HIGH THERMAL CONDUCTIVITY; VISIBLE AND ULTRAVIOLET;

ALUMINUM GALLIUM NITRIDE;

EID: 82955171613     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012028     Document Type: Conference Paper

References (9)

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