Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells

Thin Solid Films

Volumn 519, Issue 6, 2011, Pages 1866-1871

  Kieven, D ^a   Grimm, A ^a   Beleanu, A ^b   Blum, C G F ^b   Schmidt, J ^c   Rissom, T ^a   Lauermann, I ^a   Gruhn, T ^b   Felser, C ^b   Klenk, R ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

^c FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

Author keywords

Buffer layer; Cadmium sulphide; Chalcopyrite; Half Heusler; Nowotny Juza; Solar cells; Sputtering; X ray photoelectron spectroscopy

Indexed keywords

ATMOSPHERIC CONDITIONS; BAND GAPS; CADMIUM SULPHIDE; CHALCOPYRITE; CONDUCTION BAND OFFSET; COPPER SULPHIDES; CU(IN , GA)SE; FILM SURFACES; HALF-HEUSLER; HALF-HEUSLER COMPOUND; III-V COMPOUND SEMICONDUCTOR; IN-SITU; NOWOTNY-JUZA; OPTICAL ANALYSIS; P-TYPE; PREPARATION AND PROPERTIES; RADIO FREQUENCIES; RAPID DECOMPOSITION; THIN FILM SOLAR CELLS; VALENCE BAND OFFSETS; WINDOW LAYER; ZINC PHOSPHIDE;

BUFFER LAYERS; CADMIUM; CHEMICAL PROPERTIES; COPPER; COPPER COMPOUNDS; ELECTRON MOBILITY; ELECTRONS; HETEROJUNCTIONS; LITHIUM; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC SULFIDE;

FILM PREPARATION;

EID: 78651254948     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.10.045     Document Type: Article

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