Effect of compressive strain on the Raman modes of the dry and hydrated BaCe0.8Y0.2O3 proton conductor

Journal of Physical Chemistry C

Volumn 115, Issue 48, 2011, Pages 24021-24027

  Chen, Qianli ^a,b   Huang, Tzu Wen ^a   Baldini, Maria ^c,d   Hushur, Anwar ^e   Pomjakushin, Vladimir ^e   Clark, Simon ^f   Mao, Wendy L ^c,d   Manghnani, Murli H ^e   Braun, Artur ^a,h   Graule, Thomas ^a,g  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c STANFORD UNIVERSITY   (United States)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^e UNIVERSITY OF HAWAII   (United States)

^f PAUL SCHERRER INSTITUTE   (Switzerland)

^g LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^h TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; ANISOTROPIC CONDUCTIVITY; BENDING MODES; BRAGG REFLECTION; COMPRESSIVE STRAIN; CRYSTAL PLANES; EXTERNAL STRAINS; HIGH-PRESSURE AND HIGH-TEMPERATURE; HIGH-PRESSURE X-RAY DIFFRACTIONS; HOST LATTICE; IMPEDANCE SPECTROSCOPY; IN-LINE; LOW-ACTIVATION ENERGY; OXYGEN IONS; PRESSURE COEFFICIENTS; PROTON CONDUCTORS; PROTON MOBILITY; RAMAN FREQUENCIES; RAMAN MODES; STRETCHING MODES; THIN FILM SYSTEMS; VIBRATION ENERGIES; WAVE NUMBERS;

ACTIVATION ENERGY; ANISOTROPY; EPITAXIAL GROWTH; HARDENING; HYDRATION; OXYGEN; PHONONS; PROTON TRANSFER; RAMAN SPECTROSCOPY; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION;

LATTICE VIBRATIONS;

EID: 82555167482     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp208525j     Document Type: Article

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