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Volumn 38, Issue 1, 2012, Pages 223-227
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Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films
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Author keywords
A. Films; C. Electrical properties; C. Ferroelectric properties; D. TiO 2
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Indexed keywords
ANATASE TIO;
ANNEALING TEMPERATURES;
BAND GAP ENERGY;
BI-LAYER;
DEPOSITION TIME;
ELECTRICAL PROPERTY;
FERROELECTRIC PROPERTY;
GLASS SUBSTRATES;
RF-MAGNETRON SPUTTERING;
TIO;
TUNGSTEN DEPOSITION;
AMORPHOUS FILMS;
ANNEALING;
CRYSTAL STRUCTURE;
DEPOSITION;
ELECTRIC PROPERTIES;
ENERGY GAP;
FERROELECTRIC FILMS;
MAGNETRON SPUTTERING;
OXIDE MINERALS;
SUBSTRATES;
THIN FILMS;
TUNGSTEN;
VAPOR DEPOSITION;
TITANIUM DIOXIDE;
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EID: 82155191272
PISSN: 02728842
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ceramint.2011.06.055 Document Type: Article |
Times cited : (10)
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References (10)
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