Improved performance of fluorinated copper phthalocyanine thin film transistors using para-hexaphenyl as the inducing layer

Chinese Physics Letters

Volumn 28, Issue 11, 2011, Pages

  Ma, Feng ^a   Wang, Shi Rong ^a   Li, Xiang Gao ^a   Yan, Dong Hang ^b  

^a TIANJIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; FIELD EFFECT TRANSISTORS; SINGLE CRYSTALS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

ACTIVE LAYER; C. THIN FILM TRANSISTOR (TFT); COPPER PHTHALOCYANINE; COPPER-HEXADECAFLUOROPHTHALOCYANINE; COPPER-PHTHALOCYANINE; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PARA-HEXAPHENYL; PERFORMANCE;

THIN FILM TRANSISTORS;

EID: 82055193298     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/11/118501     Document Type: Article

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