Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin

Materials Letters

Volumn 64, Issue 21, 2010, Pages 2321-2324

  Yang, Jung Hoon ^a,b   Degawa, Munenori ^a   Song, Kwang Soup ^a   Wang, Chunlei ^b   Kawarada, Hiroshi ^a  

^a WASEDA UNIVERSITY   (Japan)

^b Florida International University   (United States)

Author keywords

Calcium ion sensor; Calmodulin; Diamond FET; Functionalization

Indexed keywords

CALCIUM IONS; DIAMOND SGFET; DIAMOND SURFACES; FUNCTIONALIZATIONS; FUNCTIONALIZED; FUNCTIONALIZED SURFACES; GATE FIELD; HIGH SELECTIVITY; POLYCRYSTALLINE DIAMONDS;

CALCIUM; CALCIUM ION SENSORS; CALMODULIN; CAMS; DIAMONDS; FIELD EFFECT TRANSISTORS; IONS; MESFET DEVICES; SENSORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 77955676244     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.02.057     Document Type: Article

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