Impact of dispersion profiles of silicon waveguides on optical parametric amplification in the femtosecond regime

Optics Express

Volumn 19, Issue 24, 2011, Pages 24730-24737

  Wang, Zhaolu ^a,b   Liu, Hongjun ^a   Huang, Nan ^a   Sun, Qibing ^a   Wen, Jin ^a,b  

^a XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; OPTICAL FREQUENCY CONVERSION; WAVEGUIDES;

ALL-OPTICAL; CONVERSION GAIN; DISPERSION PROFILE; FEMTOSECOND OPTICAL PARAMETRIC AMPLIFICATION; FEMTOSECONDS; FS PULSE; HIGHLY INTEGRATED; ON CHIPS; OPTICAL PARAMETRIC AMPLIFICATION; PARAMETRIC GAIN; PEAK POWER; POTENTIAL APPLICATIONS; QUASI PHASE MATCHING; SILICON RIB WAVEGUIDES; SILICON WAVEGUIDE; TEMPORAL PROFILE; ULTRAFAST SIGNAL PROCESSING;

PHOTONIC INTEGRATION TECHNOLOGY;

SILICON;

AMPLIFIER; ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; OPTICAL INSTRUMENTATION; RADIATION SCATTERING; REFRACTOMETRY;

AMPLIFIERS, ELECTRONIC; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; OPTICAL DEVICES; REFRACTOMETRY; SCATTERING, RADIATION; SILICON;

EID: 82055192028     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.024730     Document Type: Article

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