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Volumn 99, Issue 20, 2011, Pages

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

(8) Wunderer, Thomas a Northrup, John E a Yang, Zhihong a Teepe, Mark a Strittmatter, André a,c Johnson, Noble M a Rotella, Paul b Wraback, Michael b

a PALO ALTO RESEARCH CENTER (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ZONE; EMISSION LINES; GAN SUBSTRATE; HIGH REFLECTIVITY; INGAN QUANTUM WELLS; INGAN/GAN; LASER EMISSION; LASER STRUCTURES; METAL-ORGANIC VAPOR PHASE EPITAXY; RESONANT PERIODIC GAIN; SINGLE LONGITUDINAL MODE; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

ATMOSPHERIC PRESSURE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LASERS; QUANTUM WELL LASERS; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SURFACE EMITTING LASERS; WELL PUMPS;

PUMPING (LASER);

EID: 81855218172 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3663575 Document Type: Article

Times cited : (28)

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