Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemical etching

Applied Physics Letters

Volumn 99, Issue 21, 2011, Pages

  Beke, David ^a   Szekrényes, Zsolt ^a   Balogh, István ^a   Veres, Miklós ^a   Fazakas, Éva ^a   Varga, Lajos K ^a   Kamarás, Katalin ^a   Czigány, Zsolt ^b   Gali, Adam ^a,c  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

BIOMEDICAL APPLICATIONS; BONDING METHODS; ELECTROLESS; FABRICATION METHOD; FUNCTIONALIZATIONS; INFRARED MEASUREMENTS; NANO-SIZED SILICON; SILICON CARBIDE NANOCRYSTALS; SURFACE BONDING STRUCTURE; VIOLET-BLUE EMISSIONS;

FABRICATION; MEDICAL APPLICATIONS; NANOCRYSTALS; NANOPARTICLES; SURFACE STRUCTURE; WET ETCHING;

SILICON CARBIDE;

EID: 81855180903     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663220     Document Type: Article

References (17)

1. H. Morko, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994). 10.1063/1.358463
2. H. Song and Z. Zhang, Mater. Sci. Eng., A 426, 59 (2006). 10.1016/j.msea.2006.03.104
3. R. Yakimova, R. M. Petoral, Jr., G. R. Yazdi, C. Vahlberg, A. Lloyd Spetz, and K. Uvdal, J. Phys. D 40, 6435 (2007). 10.1088/0022-3727/40/20/S20
4. J. Botsoa, V. Lysenko, A. Géloen, O. Marty, J. M. Bluet, and G. Guillot, Appl. Phys. Lett. 92, 173902 (2008). 10.1063/1.2919731
5. J. Y. Fan, H. Li, J. Jiang, L. K. Y. So, Y. W. Lam, and P. K. Chu, Small 4, 1058 (2008). 10.1002/smll.200800080
6. J. A. Kelly, E. J. Henderson, and J. G. C. Veinot, Chem. Commun. 46, 8704 (2005). 10.1039/c0cc02609c
7. J. G. C. Veinot, E. J. Henderson, and C. M. Hessel, IOP Conf. Ser.: Mater. Sci. Eng 6, 012017 (2009). 10.1088/1757-899X/6/1/012017
8. J. Zhu, Z. Liu, X. L. Wu, L. L. Xu, W. C. Zhang, and P. K. Chu, Nanotechnology 18, 365603 (2007). 10.1088/0957-4484/18/36/365603
9. X. L. Wu, S. J. Xiong, J. Zhu, J. Wang, J. C. Shen, and P. K. Chu, Nano Lett. 9, 4053 (2009). 10.1021/nl902226u
10. Y. Zakharko, J. Botsoa, S. Alekseev, V. Lysenko, J. M. Bluet, O. Marty, V. A. Skryshevsky, and G. Guillot, J. Appl. Phys. 107, 013503 (2010). 10.1063/1.3273498
11. Y. Li, C. Chen, J. T. Li, Y. Yang, and Z. M. Lin, Nanoscale Res. Lett. 6, 454 (2011). 10.1186/1556-276X-6-454
12. J. Y. Fan, H. X. Li, N. Zhang, and R. F. Lu, Appl. Surf. Sci. 258, 627 (2011). 10.1016/j.apsusc.2011.06.116
13. C. Norfolk, A. Mukasyan, D. Hayes, P. Mcginn, and A. Varma, Carbon 44, 293 (2006). 10.1016/j.carbon.2005.07.020
14. P. Shangsuwan, J. A. Orejas, J. E. Gatica, S. N. Tewari, and M. Singh, Ind. Eng. Chem. Res. 40, 5191 (2001). 10.1021/ie001029e
15. J. Y. Fan, X. L. Wu, H. X. Li, H. W. Liu, G. G. Siu, and P. K. Chu, Appl. Phys. Lett 88, 041909 (2006). 10.1063/1.2168018
16. M. Vrs, P. Dek, T. Frauenheim, and A. Gali, J. Chem. Phys. 133, 064705 (2010) 10.1063/1.3464482
17. M. Vrs, P. Dek, T. Frauenheim, and A. Gali, Mater. Sci. Forum 679-680, 520 (2011). 10.4028/www.scientific.net/MSF.679-680.520