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Volumn 184, Issue 12, 2011, Pages 3257-3261
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Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method
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Author keywords
Bismuth nanobelts; Ethanol thermal method; Growth mechanism; Silicon wafer
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Indexed keywords
CAPPING AGENT;
COMPOSITE NANOSTRUCTURES;
CURRENT VOLTAGE;
ENERGY DISPERSIVE X-RAY SPECTROSCOPY;
ETHANOL-THERMAL METHOD;
GROWTH MECHANISM;
GROWTH MECHANISMS;
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES;
IN-SITU;
IN-SITU SYNTHESIZED;
INITIAL STRUCTURES;
MULTI-LAYERED STRUCTURE;
PROPERTY MEASUREMENT;
SCANNING ELECTRON MICROSCOPE;
BISMUTH;
ENERGY DISPERSIVE SPECTROSCOPY;
ETHANOL;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
NANOBELTS;
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EID: 81755174223
PISSN: 00224596
EISSN: 1095726X
Source Type: Journal
DOI: 10.1016/j.jssc.2011.10.010 Document Type: Article |
Times cited : (12)
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References (14)
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