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Volumn 184, Issue 12, 2011, Pages 3257-3261

Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

Author keywords

Bismuth nanobelts; Ethanol thermal method; Growth mechanism; Silicon wafer

Indexed keywords

CAPPING AGENT; COMPOSITE NANOSTRUCTURES; CURRENT VOLTAGE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; ETHANOL-THERMAL METHOD; GROWTH MECHANISM; GROWTH MECHANISMS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; IN-SITU; IN-SITU SYNTHESIZED; INITIAL STRUCTURES; MULTI-LAYERED STRUCTURE; PROPERTY MEASUREMENT; SCANNING ELECTRON MICROSCOPE;

EID: 81755174223     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2011.10.010     Document Type: Article
Times cited : (12)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.