The impact of a thinner binary mask absorber on 22 nm and beyond mask inspectability and defect sensitivity

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8166, Issue , 2011, Pages

  Badger, Karen D ^a   Seki, Kazunori ^b  

^a IBM   (United States)

^b Toppan Photomasks Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY MASKS; DATABASE MODELING; DEFECT SENSITIVITY; IMAGE EDGE; MASK INSPECTION; PHASE INTERFERENCE; PROCESS DEVELOPMENT; REFLECTED LIGHT; TOOL CALIBRATION;

CALIBRATION; IMAGE QUALITY; INSPECTION; PHOTOMASKS; QUARTZ; REFLECTION; STANDARDS;

DEFECTS;

EID: 81455147545     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.898295     Document Type: Conference Paper

References (2)

1. T. Faure et. al., "High Resolution Mask Process and substrate for 20 nm and Early 14 nm Node Lithography," Proc SPIE, 8166-32, (2011).
2. K. Badger et. al., "Impact of the OMOG Substrate on 32 nm Mask OPC Inspectability, Defect Sensitivity and Mask Design Rule Restrictions," Proc SPIE, 7122-8, (2008).