P-type doping of Hf0.6Zr0.4NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering

Journal of Materials Research

Volumn 26, Issue 15, 2011, Pages 1913-1918

  Xiao, Kai ^a   Zhu, Tie Jun ^a   Yu, Cui ^a   Yang, Sheng Hui ^a   Zhao, Xin Bing ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Compound; Thermoelectric; Thermoelectricity

Indexed keywords

ABSOLUTE VALUES; COMPOUND; ELECTRICAL CONDUCTIVITY; HALF-HEUSLER; HALF-HEUSLER ALLOYS; HIGH TEMPERATURE; HOLE CARRIERS; MERIT VALUES; N-TYPE CONDUCTION; P-TYPE DOPING; PARENT COMPOUNDS; ROOM TEMPERATURE; TEMPERATURE RANGE; THERMOELECTRIC; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; Y-DOPED; Y-DOPING;

ALLOYS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC SPARKS; HAFNIUM; LEVITATION MELTING; MELTING; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; ZIRCONIUM;

THERMAL CONDUCTIVITY;

EID: 81455141751     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.82     Document Type: Article

References (27)

1. T.M. Tritt: Thermoelectric materials-holey and unholey semiconductors. Science 283, 804 (1999).
2. G.A. Slack: New materials and performance limits for thermoelectric cooling, in CRC Handbook of Thermoelectrics, edited by D.M. Rowe (CRC Press, Boca Raton, FL, 1995), p. 407.
3. F.G. Aliev, N.B. Brandt, V.V. Moshchalkov, V.V. Kozyrkov, R.V. Skolozdra, and A.I. Belogorokhov: Gap at the Fermi level in the intermetallic vacancy system TiNiSn, ZrNiSn, HfNiSn. Z. Phys. B Condens. Matter 75, 167 (1989).
4. F.G. Aliev: Gap at Fermi level in some new d-electron and f-electron intermetallic compounds. Physica B 171, 199 (1991).
5. 0.01 alloy with nanophase inclusions. J. Appl. Phys. 99, 064305 (2006).
6. y prepared by levitation melting and spark plasma sintering. Acta Mater. 57, 2757 (2009).
7. S.R. Culp, S.J. Poon, N. Hickman, T.M. Tritt, and J. Blumm: Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800°C. Appl. Phys. Lett. 88, 042106 (2006).
8. S. Sakurada and N. Shutoh: Effect of Ti substitution on the thermoelectric properties of (Zr, Hf)NiSn half-Heusler compounds. Appl. Phys. Lett. 86, 082105 (2005).
9. Q. Shen, L. Chen, T. Goto, T. Hirai, J. Yang, G.P. Meisner, and C. Uher: Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds. Appl. Phys. Lett. 79, 4165 (2001). (Pubitemid 34023335)
10. 1-x. Z. Anorg. Allg. Chem. 636, 132 (2010).
11. P.F. Qiu, X.Y. Huang, X.H. Chen, and L.D. Chen: Enhanced thermoelectric performance by the combination of alloying and doping in TiCoSb-based half-Heusler compounds. J. Appl. Phys. 106, 103703 (2009).
12. xSb half-Heusler compounds. J. Appl. Phys. 103, 043711 (2008).
13. W.J. Xie, J. He, S. Zhu, X.L. Su, S.Y. Wang, T. Holgate, J.W. Graff, V. Ponnambalam, S.J. Poon, X.F. Tang, Q.J. Zhang, and T.M. Tritt: Simultaneously optimizing the independent thermoelectric properties in (Ti, Zr, Hf)(Co, Ni)Sb alloy by in situ forming InSb nanoinclusions. Acta Mater. 58, 4705 (2010).
14. T. Sekimoto, K. Kurosaki, H. Muta, and S. Yamanaka: LnPdSb (Ln = La, Gd): Promising intermetallics with large carrier mobility for high performance p-type thermoelectric materials. Appl. Phys. Lett. 89, 092108 (2006).
15. T. Sekimoto, K. Kurosaki, H. Muta, and S. Yamanaka: Thermoelectric and thermophysical properties of ErPdX (X=Sb and Bi) half-Heusler compounds. J. Appl. Phys. 99, 103701 (2006).
16. T. Sekimoto, K. Kurosaki, H. Muta, and S. Yamanaka: Hightemperature Hall measurements of lanthanide based ternary intermetallics. J. Appl. Phys. 102, 023705 (2007).
17. xSb. J. Appl. Phys. 104, 013714 (2008).
18. Y. Kimura and A. Zama: Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions. Appl. Phys. Lett. 89, 172110 (2006).
19. 1-x. Jpn. J. Appl. Phys. 46 (Pt 2), 673 (2007).
20. T. Wu, W. Jiang, X.Y. Li, S.Q. Bai, S.C. Liufu, and L.D. Chen: Effects of Ge doping on the thermoelectric properties of TiCoSbbased p-type half-Heusler compounds. J. Alloy. Comp. 467, 590 (2009).
21. 1-y (0.0 < x < 0.5; y=0.15 and 0.3). J. Appl. Phys. 103, 063716 (2008).
22. S.R. Culp, J.W. Simonson, S.J. Poon, V. Ponnambalam, J. Edwards, and T.M. Tritt: (Zr, Hf)Co(Sb, Sn) half-Heusler phases as high-temperature (> 700 degrees C) p-type thermoelectric materials. Appl. Phys. Lett. 93, 022105 (2008).
23. y. J. Alloy. Comp. 428, 262 (2007).
24. xNiSn, (x=0-0.25) solid solutions. J. Solid State Chem. 183, 521 (2010).
25. 0.02 half-Heusler alloys. J. Appl. Phys. 108, 044903 (2010).
26. 0.025 half-Heusler alloys. J. Mater. Sci. Technol. 25, 738 (2009).
27. 100-x. Nanotechnology 19, 245707 (2008).