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Volumn 26, Issue 15, 2011, Pages 1913-1918

P-type doping of Hf0.6Zr0.4NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering

Author keywords

Compound; Thermoelectric; Thermoelectricity

Indexed keywords

ABSOLUTE VALUES; COMPOUND; ELECTRICAL CONDUCTIVITY; HALF-HEUSLER; HALF-HEUSLER ALLOYS; HIGH TEMPERATURE; HOLE CARRIERS; MERIT VALUES; N-TYPE CONDUCTION; P-TYPE DOPING; PARENT COMPOUNDS; ROOM TEMPERATURE; TEMPERATURE RANGE; THERMOELECTRIC; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; Y-DOPED; Y-DOPING;

EID: 81455141751     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.82     Document Type: Article
Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.