Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2011, Pages 329-331

  Yamada, K ^a   Tsuchizawa, T ^a   Watanabe, T ^a   Kou, R ^a   Nishi, H ^a   Shinojima, H ^a   Ishikawa, Y ^b   Wada, K ^b   Itabashi, S ^a  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE GAINS; AVALANCHE STRUCTURES; REVERSE BIAS; SILICON WAVEGUIDE;

GERMANIUM; PHOTODIODES; WAVEGUIDES;

PHOTONICS;

EID: 81355163365     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2011.6053806     Document Type: Conference Paper

References (4)

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2. S. Assefa, F. Xia, Y. Vlasov, "Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects," Nature, vol. 464, pp.80-85, 2010
3. S. Park, Y. Ishikawa, T. Tsuchizawa, T. Watanabe, K. Yamada, S. Itabashi, K. Wada, "Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si," IEICE Trans. Electron., vol.E91-C, pp.181-186, 2008
4. S.M. Sze, G. Gibbons, "Avalanche breakdown voltage of abrupt and linearly graded p-n junction in Ge, Si GaAs, and GaP," Appl. Phys. Letters, vol. 8, pp.111-113, 1966