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Journal of Materials Chemistry

Volumn 21, Issue 46, 2011, Pages 18804-18809

High performance foldable polymer thin film transistors with a side gate architecture

(8) Lee, Sung Won a Kim, Bong Soo a Park, Jong Jin b Hur, Jae Hyun b Kim, Jong Min b Sekitani, Tsuyoshi c Someya, Takao c Jeong, Unyong a

a Yonsei University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-LINKABLE; FABRICATION PROCESS; ION GELS; MECHANICALLY STABLE; POLYMER SUBSTRATE; POLYMER THIN FILM TRANSISTORS; SIDE GATE; TRANSISTOR ARRAYS;

COAGULATION; GELATION; GELS; IONS; OLIGOMERS; POLYMERS; THIN FILM TRANSISTORS; THIN FILMS;

TRANSISTORS;

EID: 81255129288 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm13079j Document Type: Article

Times cited : (20)

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