Modification of the physical properties of semiconducting MgAl 2O4 by doping with a binary mixture of Co and Zn ions

Materials Research Bulletin

Volumn 46, Issue 12, 2011, Pages 2271-2277

  Iqbal, Muhammad Javed ^a   Ismail, Bushra ^a   Rentenberger, Christian ^b   Ipser, Herbert ^b  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b UNIVERSITY OF VIENNA   (Austria)

Author keywords

A. Semiconductors; C. Electron microscopy; D. Dielectric properties; D. Semiconductivity; D. Thermal conductivity

Indexed keywords

A. SEMICONDUCTORS; C. ELECTRON MICROSCOPY; D. DIELECTRIC PROPERTIES; D. SEMICONDUCTIVITY; D. THERMAL CONDUCTIVITY;

ACTIVATION ENERGY; BINARY MIXTURES; COMBUSTION SYNTHESIS; CRYSTALLITE SIZE; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; MAGNESIUM; MICROWAVE IRRADIATION; SEMICONDUCTOR DOPING; SPECIFIC HEAT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC;

THERMAL CONDUCTIVITY;

EID: 80955158430     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.08.061     Document Type: Article

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