The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 752-755

  Wang, Lanxi ^a   Chen, Xuekang ^a   Wu, Gan ^a   Guo, Wantu ^a   Cao, Shengzhu ^a   Shang, Kaiwen ^a   Han, Weihua ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Diamond film; Persistent photoconductivity; Ultraviolet photo detector

Indexed keywords

CAPTURE CROSS SECTIONS; CARRIER RECOMBINATION; DEEP LEVEL; HIGH GAIN; LIGHT IRRADIATIONS; METAL SEMICONDUCTOR METAL; MICROCRYSTALLINE DIAMOND FILMS; MINORITY CARRIER; PERSISTENT PHOTOCONDUCTIVITY; PHOTO-INDUCED; PHOTOCONDUCTIVE GAINS; POLYCRYSTALLINE DIAMOND FILMS; RECOMBINATION CENTERS; RECOMBINATION PROCESS; RESPONSIVITY; THERMAL EXCITATION; TRANSIENT SPECTROSCOPY; TRAPPING EFFECTS; TUNNELING EFFECTS; ULTRAVIOLET PHOTO-DETECTOR;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DETECTORS; DIAMONDS; LIGHT SOURCES; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOELECTRICITY; SLOW LIGHT;

DIAMOND FILMS;

EID: 80755175906     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.351     Document Type: Conference Paper

References (23)

1. J.-F. Hochedez, W. Schmutz, Y. Stockman, U. Schühle, A. BenMoussa, S. Koller, K. Haenen, D. Berghmans, J.-M. Defise, J.-P. Halain, A. Theissen, V. Delouille, V. Slemzin, D. Gillotay, D. Fussen, M. Dominique, F. Vanhellemont, D. McMullin, M. Kretzschmar, A. Mitrofanov, B. Nicula, L. Wauters, H. Roth, E. Rozanov, I. Rüedi, C. Wehrli, A. Soltani, H. Amano, R. Van der Linden, A. Zhukov, F. Clette, S. Koizumi, V. Mortet, Z. Remes, R. Petersen, M. Nesládek, M. D'Olieslaeger, J. Roggen, and P. Rochus Adv. Space Res. 37 2006 303
2. E. Pace, and A. De Sio Nucl. Instr. Meth. A 514 2003 93
3. M.D. Whitfield, S.P. Lansley, O. Gaudin, R.D. McKeag, N. Rizvi, and R.B. Jackman Diamond Relat. Mater. 10 2001 715
4. A.R. Mahon, L. Allers, R.J. Ott, J.F. Hassard, and A. Mainwood Nucl. Instr. Meth. A 392 1997 274
5. A. Balducci, M. Marinelli, E. Milani, M.E. Morgada, A. Tucciarone, G. Verona-Rinati, M. Angelone, and M. Pillon Appl. Phys. Lett. 86 2005 193509
6. M. Liao, and Y. Koide Appl. Phys. Lett. 89 2006 113509
7. A. BenMoussa, J.F. Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Koller, J.-M. Defise, and S. Koizumi Diamond Relat. Mater. 15 2006 802
8. R.S. Sussmann CVD Diamond for Electronic Devices and Sensors 2009 John Wiley & Sons West Sussex
9. E. Pace, F. Galluzzi, M.C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli Nucl. Instr. Meth. A 387 1997 255
10. W. Jiang, J. Ahn, F.L. Xu, C.Y. Liaw, Y.C. Chan, Y. Zhou, and Y.L. Lam Appl. Phys. Lett. 72 1998 1131
11. E. Pace, R. Di Benedetto, and S. Scuderi Diamond Relat. Mater. 9 2000 987
12. L. Barberini, S. Cadeddu, M. Caria, and F. Murgia Nucl. Instr. Mech. A 442 2000 400
13. E.K. Liu, B.S. Zhu, and J.S. Luo Physics of semiconductor 6th edition 2003 Publishing House of Electronics Industry Beijing
14. V.E. Lashkaryov Ukr. J. Phys. 53 2008 53
15. G.H. Chen, X.W. Zhang, Y.Y. Ji, and H. Yan Acta Phys. Sin. Chin. Ed. 46 1997 1188
16. B.M. Arora, S. Chakravarty, S. Subramanian, V.I. Polyakov, M.G. Ermakov, O.N. Ermakova, and P.I. Perov J. Appl. Phys. 73 1993 1802
17. V.I. Polyakova, A.I. Rukovishnikov, N.M. Rossukanyi, and V.G. Ralchenko Diamond Relat. Mater. 10 2001 593
18. V.I. Polyakov, A.I. Rukovishnikov, N.M. Rossukanyi, V.G. Pereverzev, S.M. Pimenov, J.A. Carlisle, D.M. Gruen, and E.N. Loubnin Diamond Relat. Mater. 12 2003 1776
19. S.M. Sze, and K.K. Ng Physics of Semiconductor Devices 3th edition 2006 John Wiley & Sons New Jersey
20. Z.H. Zhang, D.G. Zhao, Y.P. Sun, Z.H. Feng, X.M. Shen, B.S. Zhang, G. Feng, X.H. Zheng, and H. Yang Chin. J. Semicond. 24 2003 34
21. A. De Sio, J. Achard, A. Tallaire, R.S. Sussmann, A.T. Collins, F. Silva, and E. Pace Appl. Phys. Lett. 86 2005 213504
22. H.M. Chen, Y.F. Chen, M.C. Lee, and M.S. Feng Phys. Rev. B 56 1997 6942
23. C.V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida Appl. Phys. Lett. 73 1998 244