Improving the performance of OLEDs by using a low-temperature-evaporable n-dopant and a high-mobility electron transport host

Optics Express

Volumn 19, Issue 106, 2011, Pages A1265-A1271

  Duan, Lian ^a   Zhang, Deqiang ^a   Li, Yanrui ^b   Zhang, Guohui ^b   Qiu, Yong ^a  

^a Tsinghua University   (China)

^b VISIONOX TECHNOLOGY INC   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; OPTIMIZATION;

FINE TUNING; HIGH CURRENTS; HIGH-MOBILITY ELECTRONS; N-DOPED; N-TYPE LAYERS; OPTICAL PATH; ORGANIC LAYERS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80755167825     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1265     Document Type: Article

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