Dynamic switching characteristic dependence on sidewall angle for phase change memory

Solid-State Electronics

Volumn 67, Issue 1, 2012, Pages 1-5

  Long, X M ^a   Miao, X S ^a,b   Sun, J J ^a   Cheng, X M ^a,b   Tong, H ^a   Li, Y ^a   Yang, D H ^c   Huang, J D ^c   Liu, C ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b Wuhan National Laboratory for Optoelectronic   (China)

^c Wuhan Xinxin Semiconductor Manufacturing Corp   (China)

Author keywords

Critical dimension; Phase change memory; Sidewall angle; Thermo electric simulation

Indexed keywords

CRITICAL DIMENSION; CURRENT PULSE; DYNAMIC RESISTANCE; DYNAMIC SWITCHING; FEATURE SIZES; PHASE TRANSITION PROPERTIES; SIDEWALL ANGLES; THERMO-ELECTRIC SIMULATION; THRESHOLD CURRENTS;

ASPECT RATIO; GERMANIUM; HEATING; JOULE HEATING; PHASE TRANSITIONS;

PHASE CHANGE MEMORY;

EID: 80455164615     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.07.001     Document Type: Article

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