MgO doping effects on dielectric properties of Ba0.55Sr 0.45TiO3 ceramics

Journal of the American Ceramic Society

Volumn 94, Issue 11, 2011, Pages 3883-3888

  Zhang, Mingwei ^a   Zhai, Jiwei ^a   Shen, Bo ^a   Yao, Xi ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC COMPONENTS; DIELECTRIC PEAKS; DOPING EFFECTS; HIGH-CONTENT; LOSS TANGENT; LOW CONCENTRATIONS; LOW TEMPERATURES; MGO CONTENT; MICROWAVE PERFORMANCE; OXYGEN OCTAHEDRA; PEROVSKITE STRUCTURES; Q-VALUES; QUALITY FACTORS; RAMAN PEAK; SOLID-STATE REACTION TECHNIQUES; TIO;

BARIUM; CERAMIC MATERIALS; MICROWAVE FREQUENCIES; PEROVSKITE; PHOTODEGRADATION; RAMAN SPECTROSCOPY;

DIELECTRIC PROPERTIES;

EID: 80255136126     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04577.x     Document Type: Article

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